TOP GUIDELINES OF N TYPE GE

≤ 0.15) is epitaxially developed over a SOI substrate. A thinner layer of Si is grown on this SiGe layer, after which the construction is cycled via oxidizing and annealing levels. Due to the preferential oxidation of Si around Ge [68], the original Si1–Germanium is usually Utilized in detectors in many different fields, In keeping with a study